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米兰app免费下载安装 IEEE Transaction on Electron Device 2023, 70(1): 185-190.(8)Lijuan Wu*, Tao Qiu, Xuanting Song, et al. Analytical model for high-k SOI pLDMOS with self-adaptive balance of polarization charge. Microelectronics Journal, 2023, 132: 105677.
(9)Lijuan Wu*, Banghui Zhang, Gaoqiang Deng, et al. A Superjunction Insulated Gate Bipolar Transistor with Embedded Self-biased N-Type Metal–Oxide–Semiconductor Field-Effect Transistor. Journal of Electronic Materials, 2023: 1-8.
(10)Lijuan Wu*,Xing Chen, Jinsheng Zeng, et al. Novel Accumulation Mode Superjunction Device With Extended Superjunction Gate. IEEE Transaction on Electron Device, 2022,69(5):2560-2565.
(11)Lijuan Wu*,Jinsheng Zeng, et al. Analytical Model and Mechanism of a Linear Extended Gate for Lateral Internal Superjunction Power Devices. Silicon, 2022.
(12)Lijuan Wu*,Heng Liu, et al. 4H-SiC Trench IGBT with Controllable Hole-Extracting Path for Low Loss. Chinese PhySiCs B, 2022.
(13)Lijuan Wu*,Wu, H., Zeng, J. et al. A Novel LDMOS with Ultralow Specific on-Resistance and Improved Switching Performance. Silicon ,2021.
(14)Lijuan Wu*, Chen J , H Yang, et al. A Ultra-Low Specific On-Resistance and Extended Gate SJ LDMOS Structure. Transactions on Electrical and Electronic Materials, 2021(5).
(15)Lijuan Wu*, Ding Q , Chen J . Improved Deep Trench Super-junction LDMOS Breakdown Voltage By Shielded Silicon-Insulator-Silicon Capacitor. Silicon, 2020(3).
(16)Lijuan Wu*, Huang Y , Song Y , et al. Novel High-K SOI LDMOS with N + Buried Layer. IETE Technical Review, 2020:1-6.
(17)Lijuan Wu*, Zhu L, Chen X, Variable-K double trenches SOI LDMOS with high-concentration P-pillar. Chinese PhySiCs B, 2020, 29(5).
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